* Organized as 1M x16 or 2M x8
* Dual Bank Architecture
– 16 Mbit Bottom Sector Protection - SST36VF1601C: 12 Mbit + 4 Mbit
– 16 .
these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 yea.
The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliabili.
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